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VSMY7850X01
3
2.5
2
1.5
1
0.5
0
www.vishay.com
R thJP = 10 K/W
1.2
1.0
0.8
0.6
0.4
0.2
0
Vishay Semiconductors
R thJP = 10 K/W
0
20
40
60
80
100
120
0
20
40
60
80
100
120
T amb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
T amb - Ambient Temperature (°C)
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (T amb = 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
TEST CONDITION
I F = 1 A, t p = 20 ms
I F = 5 A, t p = 100 μs
SYMBOL
V F
V F
MIN.
TYP.
2.0
3.5
MAX.
2.5
UNIT
V
V
Temperature coefficient of V F
Reverse current
I F = 1 A
V R = 5 V
TK VF
I R
- 0.2
not designed for reverse operation
mV/K
μA
Radiant intensity
Radiant power
Temperature coefficient of ? e
I F = 1 A, t p = 20 ms
I F = 5 A, t p = 100 μs
I F = 1 A, t p = 20 ms
I F = 1 A
I e
I e
? e
TK ? e
130
170
780
520
- 0.5
390
mW/sr
mW/sr
mW
%/K
Angle of half intensity
?
± 60
deg
Peak wavelength
Spectral bandwidth
Temperature coefficient of ? p
Rise time
Fall time
Rev. 1.3, 02-May-13
I F = 1 A
I F = 1 A
I F = 1 A
I F = 1 A
I F = 1 A
2
? p
??
TK ? p
t r
t f
850
30
0.2
15
18
nm
nm
nm/K
ns
ns
Document Number: 81145
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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